suzhou goodark electronics co., ltd version 1.0 gdssf22a5e main product characteristics: v dss 20 v r ds (on) 3 i d 238m a features and benefits : description : absolut e max rating @t a =25 unless otherwise specified symbol parameter max. units id continuous drain current 238 m a idm pulsed drain current (t p 10 s) 714 pd power dissipation 300 m w v ds drain - source voltage 20 v vgs gate - to - source voltage 1 0 v tj tstg operating junction and storage temperature range - 55 to 1 50 c t l lead temperature for soldering purposes 260 i sd continuous source current (body diode) 238 m a thermal resistance symbol characterizes value unit r j a junction - to - ambient (ste ady - state) 416 /w p in assignment schematic diagram ? low gate charge for fast switching ? small 1.6 x 1.6 mm footprint ? esd protected gate ? pb - free package is available ? 1 50 operating temperature it utilizes the latest trench processing techniques to ach ieve fast switching spe ed and short reverse recovery time . these features combine to make this design an extremely efficient and reliable device for use in power management load switch, level shift, cell phones, media players, digital cameras, pda s, video games, hand held compu ters, etc.
gd ssf 22a5e suzhou goodark electronics co., ltd version 1.0 electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions bvdss drain - to - source breakdown voltage 2 0 v vgs = 0v, id = 10 0a rds(on) static drain - to - source o n - resistance 1.5 3.0 vgs = 4.5 v, id = 10m a 2.2 3.5 vgs = 2 .5 v, id = 10m a vgs(th) gate threshold voltage 0.5 1.0 1.5 v vds = 3v , id = 10 0a idss drain - to - source leakage current 1 . 0 a vds = 20 v, vgs = 0v igss gate - to - source forward l eakage 1 00 a vgs = 1 0 v gate - to - source reverse leakage - 1 00 vgs = - 1 0 v g fs forward transconductance 50 ms id = 10m a , vds = 3 v td(on) turn - on delay time 13 ns vgs= 4.5 v, vds= 5 v, id=10ma , rg= 10 tr rise time 15 td(off) turn - off delay time 98 tf fall time 60 ciss input capacitance 11.5 20 pf vgs = 0 v , vds = 5 v , ? = 1.0mhz coss output capacitance 10 15 crss reverse transfer capacitance 3.5 6.0 source - drain ratings and characteristics symbol par ameter min. typ. max . units conditions vsd diode forward voltage 0. 6 6 0.8 v is=1 0m a, vgs=0v n otes: the maximum current rating is limited by bond - wires. r e p e t i t i v e r a t i n g ; p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the valu e of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
gd ssf 22a5e suzhou goodark electronics co., ltd version 1.0 t ypical electrical and thermal characteristics
gd ssf 22a5e suzhou goodark electronics co., ltd version 1.0 t ypical electrical and thermal characteristics test circui ts and waveforms switch waveforms :
gd ssf 22a5e suzhou goodark electronics co., ltd version 1.0 mechanical data (sc - 89)
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